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| BSP 296 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * VGS(th) = 0.8...2.0V Pin 1 G Type BSP 296 Type BSP 296 Pin 2 D Pin 3 S Pin 4 D VDS 100 V ID 1A RDS(on) 0.8 Package SOT-223 Marking BSP 296 Ordering Code Q67000-S067 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 100 100 Unit V VDS VDGR VGS Vgs ID RGS = 20 k Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current 14 20 A 1 TA = 42 C DC drain current, pulsed IDpuls 4 TA = 25 C Power dissipation Ptot 1.8 W TA = 25 C Semiconductor Group 1 Sep-12-1996 BSP 296 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 70 10 E 55 / 150 / 56 K/W Unit C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 1.4 0.1 8 10 0.55 0.95 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS A nA nA 0.8 1.4 VDS = 100 V, VGS = 0 V, Tj = 25 C VDS = 100 V, VGS = 0 V, Tj = 125 C VDS = 60 V, VGS = 0 V, Tj = 25 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 1 A VGS = 4.5 V, ID = 1 A Semiconductor Group 2 Sep-12-1996 BSP 296 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.5 1.3 300 60 30 - S pF 400 90 45 ns 8 12 VDS 2 * ID * RDS(on)max, ID = 1 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Rise time tr 15 25 VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Turn-off delay time td(off) 120 160 VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Fall time tf 65 85 VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Semiconductor Group 3 Sep-12-1996 BSP 296 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 C Inverse diode direct current,pulsed A 0.95 1 4 V 1.3 Values typ. max. Unit ISM VSD TA = 25 C Inverse diode forward voltage VGS = 0 V, IF = 2 A, Tj = 25 C Semiconductor Group 4 Sep-12-1996 BSP 296 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 1.1 A 2.0 W Ptot 1.6 1.4 1.2 ID 0.9 0.8 0.7 0.6 1.0 0.5 0.8 0.4 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25C Transient thermal impedance Zth JA = (tp) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 296 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 2.4 A 2.0 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 2.6 Ptot = 2W l j kg ihf e d VGS [V] a 2.0 b c 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 2.2 a b ID 1.8 1.6 1.4 c RDS (on) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 d c d e f g h 1.2 1.0 0.8 0.6 0.4 0.2 0.0 a i j bk l 0.6 0.4 0.2 0.0 VGS [V] = a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 ef h i kg j k 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 A 1.5 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, 4.5 A 2.0 S ID 3.5 3.0 gfs 1.6 1.4 1.2 2.5 1.0 2.0 0.8 1.5 0.6 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS A ID 4.0 Semiconductor Group 6 Sep-12-1996 BSP 296 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 1 A, VGS = 10 V 2.0 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 RDS (on) 1.6 1.4 1.2 1.0 0.8 VGS(th) 3.6 3.2 2.8 98% 2.4 98% 2.0 typ 0.6 1.6 1.2 typ 0.4 0.2 0.0 -60 -20 20 60 100 C 160 2% 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 1 pF C 10 2 Ciss A IF 10 0 Coss Crss 10 1 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 10 -2 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 Sep-12-1996 BSP 296 Drain-source breakdown voltage V(BR)DSS = (Tj ) Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C 120 V 116 114 V(BR)DSS 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 Sep-12-1996 BSP 296 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996 |
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